Structures of 6H-SiC Surfaces

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Scanning Tunneling Spectroscopy of Oxidized 6H-SiC Surfaces

Scanning tunneling microscopy and spectroscopy has been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800oC under 1×10 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but ar...

Step Formation on Hydrogen-etched 6H-SiC{0001} Surfaces

Self-organization in porous 6H–SiC

Self-organization in porous 6H–SiC" (2000). Faculty Publications from the Department of Electrical and Computer Engineering. 7.

Hexagonal boron nitride and 6H-SiC heterostructures